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LMUN5330DW1T1G Datasheet PDF

Leshan Radio Company LMUN5330DW1T1G

the LMUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Part No. LMUN5330DW1T1G
Datasheet LMUN5330DW1T1G Download
Manufacturer
Leshan Radio Company
Description Dual Bias Resistor Transistors
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LMUN5330DW1T1G datasheet page 1 preview

MAXIMUM RATINGS

(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 , – minus sign for Q 1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS V CBO V CEO IC 50 Vdc 50 Vdc 100 mAdc Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T A = 25°C Derate above 25°C P D 187 (Note 1.) mW 256 (Note 2.) 1.5 (Note 1.) mW/°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient R θJA 670 (Note 1.) 490 (Note 2.) °C/W Characteristic (Both Junctions Heated) Symbol Max Total Device Dissipation T A = 25°C Derate above 25°C P D 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead R θJA R θJL 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) Junction and Storage Temperature T J , T stg –55 to +150 1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad Unit mW mW/°C °C/W °C/W °C 6 5 4 1 2 3 SOT-363/SC-88 6 54...
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