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LRB411DLT1G - Schottky Barrier Diodes

Features

  • 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current（.
  • 1） Forward current s urge peak （60Hz1cyc）（.
  • 1） Junction tem perature Storage tem perature (.
  • 1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 20 500 3.

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Datasheet Details

Part number LRB411DLT1G
Manufacturer Leshan Radio Company
File Size 362.01 KB
Description Schottky Barrier Diodes
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LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB411DLT1G zApplications Low current rectification LRB411DLT1G 3 zFeatures 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current（*1） Forward current s urge peak （60Hz1cyc）（*1） Junction tem perature Storage tem perature (*1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 20 500 3 125 -40 to +125 zElectrical characteristics (Ta = 25°C) Param eter Forwarad voltage Revers e current Capacitance between term inal Sym bol Min. Typ. Max. VF1 - - 0.50 VF2 - - 0.
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