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LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB421LT1G
zApplications Low power rectification
LRB421LT1G
3
zFeatures 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability.
zConstruction Silicon epitaxial planar
z We declare that the material of product compliance with RoHS requirements.
zAbsolute maximum ratings (Ta = 25°C)
Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current(*1) Forward current s urge peak (60Hz1cyc)(*1) Junction tem perature Storage tem perature
(*1) Rating of per diode
Sym bol
VRM VR Io IFSM Tj Ts tg
Lim its 40 40 100 1 125
-40 to +125
zElectrical characteristics (Ta = 25°C)
Param eter Forwarad voltage
Revers e current Capacitance between term inal
Sym bol Min. Typ. Max.
VF1 - - 0.55
VF2 - - 0.