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LRB421LT1G - SCHOTTKY BARRIER DIODE

Features

  • 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current(.
  • 1) Forward current s urge peak (60Hz1cyc)(.
  • 1) Junction tem perature Storage tem perature (.
  • 1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 40 100 1.

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Datasheet Details

Part number LRB421LT1G
Manufacturer Leshan Radio Company
File Size 218.51 KB
Description SCHOTTKY BARRIER DIODE
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LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB421LT1G zApplications Low power rectification LRB421LT1G 3 zFeatures 1) Small mold type. (SOT-23) 2) Low IR 3) High reliability. zConstruction Silicon epitaxial planar z We declare that the material of product compliance with RoHS requirements. zAbsolute maximum ratings (Ta = 25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Average rectified forward current(*1) Forward current s urge peak (60Hz1cyc)(*1) Junction tem perature Storage tem perature (*1) Rating of per diode Sym bol VRM VR Io IFSM Tj Ts tg Lim its 40 40 100 1 125 -40 to +125 zElectrical characteristics (Ta = 25°C) Param eter Forwarad voltage Revers e current Capacitance between term inal Sym bol Min. Typ. Max. VF1 - - 0.55 VF2 - - 0.
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