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LESHAN RADIO COMPANY, LTD.
Dual Hot Carrier Mixer Diodes
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits. • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts • Low Forward Voltage — 0.5 Volts (Typ) @ I F = 10 mA
MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1
3
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage THERMALCHARACTERISTICS
VR
7.0 V CC
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board (1) T A = 25°C Derate above 25°C
PD
225 mW 1.8 mW/°C
Thermal Resistance, Junction to Ambient Total Device Dissipation
Alumina Substrate (2) T A = 25°C Derate above 25°C
RθJA PD
556 °C/W 300 mW
2.
MMBD353LT1 Datasheet
