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LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
1 BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value –40 –4.0 –100
3 COLLECTOR
2 EMITTER
Unit Vdc Vdc mAdc
MMBTA70LT1
3
1 2
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature
Symbol PD
RθJA PD
RθJA TJ , Tstg
Max Unit 225 mW
1.8 mW/°C 556 °C/W 300 mW
2.
MMBTA70LT1 Datasheet
