Linear Technology 3N171
N-CHANNEL MOSFET ENHANCEMENT MODE
| Part No. | 3N171 |
|---|---|
| Datasheet | 3N171 Download |
| Manufacturer |  Linear Technology |
| Description | N-CHANNEL MOSFET ENHANCEMENT MODE |
| Buy | Stock & Price |
FEATURES
Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHINGABSOLUTE MAXIMUM RATINGS
@ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Current Drain to Source Maximum Voltages Drain to Gate Drain to Source Gate to Source ±35V 25V ±35V 30mA * Body tied to Case. 300mW -65 to +150 °C -55 to +135 °C 1 N-CHANNEL MOSFET ENHANCEMENT MODE rds(on) ≤ 200Ω td(on) ≤ 3.0ns TO-72 BOTTOM VIEW G 2 3 D S 1 4 CELECTRICAL CHARACTERISTICS
@ 25 °C (unless otherwise stated) (VSB = 0V unless otherwise stated) SYMBOL BVDSS VDS(on) VGS(th) IGSS IDSS ID(on) gfs rds(on) Crss Ciss Cdb CHARACTERISTIC Drain to Source Breakdown Voltage Drain to Source "On" Voltage Gate to Source Threshold Voltage Gate Leakage Current Drain Leakage Current "Off" Drain Current "On" Forward Transconductance Drain to Source "On" Resistance Reverse Transfer Capacitance Input Capa...