3N171 Datasheet PDF

FEATURES

DIRECT REPLACEMENT FOR INTERSIL 3N171 LOW DRAIN TO SOURCE RESISTANCE FAST SWITCHING

ABSOLUTE MAXIMUM RATINGS

(Note 1) @ 25°C (unless otherwise noted) rDS(on) ≤ 200Ω td(on) ≤ 3.0ns Maximum Temperatures Storage Temperature Operating Junction Temperature 3N171

FEATURES

: Maximum Power Dissipation Continuous Power Dissipation ƒ Low ON Resistance MAXIMUM CURRENT ƒ Low Capacitance Drain to Source ƒ High Gain MAXIMUM VOLTAGES ƒ High Gate Breakdown Voltage Drain to Gate ƒ Low Threshold Voltage Drain to Source Peak Gate to Source 3N171

ELECTRICAL CHARACTERISTICS

@ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS BVDSS Drain to Source Breakdown Voltage 25 ‐‐ ‐‐ V VDS(on) Drain to Source “On” Voltage ‐‐ ‐‐ 2.0 VGS(th) Gate to Source Threshold Voltage 1.5 ‐‐ 2.0 IGSS Gate Leakage Current ‐‐ ‐‐ 10 pA IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 10 nA ID(on) Drain Current “On” 10 ‐‐ ‐‐ mA gfs Forward Transconductance 1000 ‐‐ ‐‐ µS rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐...