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IXFB44N100P
1000 V, 220 mΩ PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode
MOSFET Datasheet
Pinout Diagram (PLUS TO-264)
Tab D
G S
GD S G: Gate; D: Drain; S: Emitter; Tab: Drain
Features:
■ Unclamped Inductive Switching (UIS) Rated
■ Low Package Inductance ■ Easy to Drive and to Protect
■ N-Channel Enhancement Mode ■ Fast Intrinsic Rectifier ■ Avalanche Rated ■ Low RDS(on) and QG
Advantages:
■ Plus 264TM Package for Clip or Spring Mounting
■ Space Savings
■ High Power Density
Applications:
■ Switched-Mode and Resonant-Mode Power Supplies
■ DC-DC Converters
■ Laser Drivers ■ AC and DC Motor Controls ■ Robotics and Servo Controls
Product Summary
Characteristic VDSS ID25 RDS(on) trr
Value 1000
44 220 300
Unit V A Ω ns
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