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IXFL44N100P - Power MOSFET

Key Features

  • Silicon Chip on Direct-Copper-Bond Substrate.
  • High Power Dissipation.
  • Isolated Mounting Surface.
  • 2500 V Electrical Isolation.
  • Low Drain toTab Capacitance (.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IXFL44N100P 1000 V, 240 mΩ PolarTM HiPerFETTM Power MOSFET MOSFET Datasheet Pinout Diagram (ISOPLUS i5-PakTM (HV)) Tab D G S GD S G: Gate; D: Drain; S: Source; Tab: Electrically Isolated Features ■ Silicon Chip on Direct-Copper-Bond Substrate ■ High Power Dissipation ■ Isolated Mounting Surface ■ 2500 V Electrical Isolation ■ Low Drain toTab Capacitance (<30pF) ■ Rugged Polysilicon Gate Cell Structure ■ Unclamped Inductive Switching (UIS) Rated ■ Low Package Inductance ■ Fast Intrinsic Rectifier ■ Low RDS(on) and QG Advantages ■ Easy Assembly ■ Space Savings ■ High Power Density Applications ■ Switched-Mode and Resonant-Mode Power Supplies ■ DC-DC Converters ■ Laser Drivers ■ AC and DC Motor Controls ■ Robotics and Servo Controls Product Summary Characteristics VDSS ID25 RD