Datasheet4U Logo Datasheet4U.com

MG1250S-BA1MM - IGBT

Key Features

  • Ultra Low Loss.
  • High Ruggedness.
  • High Short Circuit Capability Agency Approvals AGENCY AGENCY FILE NUMBER E71639.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT Toshiba
MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT Toshiba
MG12032-01 LCD BONA
MG120R040 N-CHANNEL Enhancement Silicon Carbide MOSFET JILIN SINO
MG120R080 N-CHANNEL Enhancement Silicon Carbide MOSFET JILIN SINO

Other Datasheets by Littelfuse

Part Number Description
MG12200D-BN2MM IGBT
MG12225WB-BN2MM IGBT
MG1225H-XN2MM IGBT
MG12600WB-BR2MM IGBT
MG1275W-XBN2MM IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Module 1200V 50A IGBT Module MG1250S-BA1MM Features • Ultra Low Loss • High Ruggedness • High Short Circuit Capability Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Applications • Inverter • Converter • Welder RoHS ® • Positive Temperature Coefficient • With Fast Free-Wheeling Diodes • SMPS and UPS • Induction Heating Module Characteristics (TC = 25°C, unless otherwise specified) Symbol RthJC RthJCD Torque Torque Weight Parameters Junction-to-Case Thermal Resistance Module-to-Sink Module Electrodes Test Conditions Per IGBT Per Inverse Diode Recommended (M6) Recommended (M5) Absolute Maximum Ratings (TC = 25°C, unless otherwise specified) Symbol Parameters Test Conditions IGBT VCES VGES IC ICpuls Ptot TJ TSTG Visol Diode Collector - Emitter Voltage Gate - Emitte