Datasheet4U Logo Datasheet4U.com

MG1275W-XBN2MM - IGBT

Key Features

  • High level of integration.
  • only one power semiconductor module required for the whole drive.
  • Low saturation voltage and positive temperature coefficient.
  • Fast switching and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.
  • Industry standard package with insulated copper base plate and soldering pins for PCB mounting.
  • Temperature sense included.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MG1200FXF1US51 TOSHIBA GTR Module Silicon N-Channel IGBT Toshiba
MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT Toshiba
MG12032-01 LCD BONA
MG120R040 N-CHANNEL Enhancement Silicon Carbide MOSFET JILIN SINO
MG120R080 N-CHANNEL Enhancement Silicon Carbide MOSFET JILIN SINO

Other Datasheets by Littelfuse

Part Number Description
MG12200D-BN2MM IGBT
MG12225WB-BN2MM IGBT
MG1225H-XN2MM IGBT
MG1250S-BA1MM IGBT
MG12600WB-BR2MM IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Module 1200V 75A IGBT Module MG1275W-XBN2MM RoHS Features • High level of integration—only one power semiconductor module required for the whole drive • Low saturation voltage and positive temperature coefficient • Fast switching and short tail current • Free wheeling diodes with fast and soft reverse recovery • Industry standard package with insulated copper base plate and soldering pins for PCB mounting • Temperature sense included Applications • AC motor control • Motion/servo control • Inverter and power supplies Module Characteristics (TJ = 25°C, unless otherwise specified) Symbol TJ max) TJ op Tstg Visol CTI Md Weight Parameters Max.