S4X8ES2 Overview
Key Features
- Surge capability > 10 A
- Blocking voltage (VDRM / VRRM) capability up to 800 V
- High dv/dt noise immunity
- Improved turn-off time (tq) < 25 µsec
- Sensitive gate for direct microprocessor interface
- Through-hole and surface-mount packages
- RoHS compliant and Halogen-Free