LT1N60 Datasheet PDF | Longtium Microelectronics

Longtium Microelectronics LT1N60

This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC. This technology enable power MOSFET to have better characteristics, Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Part No.	LT1N60
Datasheet	LT1N60 Download
Manufacturer	Longtium Microelectronics
Description	N-channel MOSFET
Buy	Stock & Price

FEATURES

 High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested

GENERAL DESCRIPTION

  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually used at AC adaptors and SMPS . LT1N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT C 1N60C 2 LT I 1N60C 3 LT D 1N60C Marking LT1N60C LT1N60C LT1N60C Package TO-92 TO-251 TO-252 Packaging TAPE TUBE REEL （2011-AUG Version1.0） 1/7 LT1N60 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (note 2) Repetitive Avalanche Energy (note 1) Peak diode Recovery dv/dt (note 3) Total power dissipat...