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LT1N60 - N-channel MOSFET

General Description

 This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.

 Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Key Features

  •  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General.

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Datasheet Details

Part number LT1N60
Manufacturer Longtium Microelectronics
File Size 388.49 KB
Description N-channel MOSFET
Datasheet download datasheet LT1N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually used at AC adaptors and SMPS . LT1N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT C 1N60C 2 LT I 1N60C 3 LT D 1N60C Marking LT1N60C LT1N60C LT1N60C Package TO-92 TO-251 TO-252 Packaging TAPE TUBE REEL （2011-AUG Version1.0）www.longtiumic.