LT7N60 Datasheet PDF | Longtium Microelectronics

Longtium Microelectronics LT7N60

This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC. This technology enable power MOSFET to have better characteristics, Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

Part No.	LT7N60
Datasheet	LT7N60 Download
Manufacturer	Longtium Microelectronics
Description	N-channel MOSFET
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FEATURES

 High ruggedness  RDS(ON) (Max 1.3 Ω)@VGS=10V  Gate Charge (Typ 38nC)  Improved dv/dt Capability  100% Avalanche Tested

GENERAL DESCRIPTION

  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. LT7N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT P 7N60A 2 LT F 7N60A Marking LT7N60A LT7N60A Package TO-220 TO-220F Packaging TUBE TUBE （2011-AUG Version1.0） 1/7 LT7N60 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Contin