Datasheet Summary
Xi′an Longtium Microelectronics Technology Developing Co., Ltd.
Features
High ruggedness RDS(ON) (Max 1.3 Ω)@VGS=10V Gate Charge (Typ 38nC) Improved dv/dt Capability 100% Avalanche Tested
General Description
This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.
This technology enable power MOSFET to have better characteristics,
Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply.
LT7N60
N-channel MOSFET
N-channel MOSFET 2
Order Codes
Item Sales Type 1 LT P 7N60A 2 LT F...