LSD11N70 Description
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Product Summary VDS @ Tj,max 750V RDS(on),max 0.37Ω IDM 30A Qg,typ 29nC.
LSD11N70 Key Features
- Ultra low RDS(on)
- Ultra low gate charge (typ. Qg = 29nC)
- 100% UIS tested
- RoHS pliant