LSD11N70 - N-channel MOSFET

Product Overview

Datasheet Details

Part number	LSD11N70
Manufacturer	Lonten
File Size	479.77 KB
Description	N-channel MOSFET
Datasheet	LSD11N70 Datasheet
Additional preview pages of the LSD11N70 datasheet.

Product details

Description

LonFETTM Power MOSFET is fabricated using advanced super junction technology.

The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

Ultra low RDS(on).
Ultra low gate charge (typ. Qg = 29nC).
100% UIS tested.
RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche energy, single pulse 2) Avalanche energy, repetitive 1) Avalanche current, repetitive 1) Power Dissipation ( TC = 25°C ) - Derate above 25°C Operating and Storage Temperature Range Con.

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Published: Mar 30, 2021 |