| Part Number | LSD11N70 Datasheet |
|---|---|
| Manufacturer | VBsemi |
| Overview |
LSD11N70-VB
LSD11N70-VB Datasheet
N-Channel 700V (D-S) Super Junction Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configurat.
* Low figure-of-merit (FOM) Ron x Qg * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) APPLICATIONS * Server and telecom power supplies * Switch mode power supplies (SMPS) * Power factor correction power supplies (PFC. |
LSD11N70 Datasheet and Specifications PDF
The LSD11N70 is a N-Channel MOSFET.
| Part Number | LSD11N70 Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Lonten |
| Overview |
LonFETTM Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superio.
* Ultra low RDS(on) * Ultra low gate charge (typ. Qg = 29nC) * 100% UIS tested * RoHS compliant D G S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Drain-Source Voltage Continuous drain current Pulsed drain current 1) ( TC = 25°C ) ( TC = 100°C ) Gate-Source voltage Avalanche ener. |