LSGE085R036
Overview
Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using shielded gate trench RDS(on).max@ VGS=10V 3.6mΩ DMOS technology. This advanced technology has ID 120A been especially tailored to minimize on-state resistance,provide superior switching performance, Pin Configuration and with stand high energy pulse in the avalanche and commutation mode.
