LSGE085R036 - N-channel 85V 120A Power MOSFET

General Description

DMOS technology.

Key Features

85V,120A,RDS(on). max=3.6mΩ@VGS = 10V.
Improved dv/dt capability.
Fast switching TO-263.
100% EAS Guaranteed.
Green device available D.

LSGE085R036 n-channel 85v 120a power mosfet by Lonten - Datasheet Preview

Datasheet Details

Part number	LSGE085R036
Manufacturer	Lonten
File Size	2.36 MB
Description	N-channel 85V 120A Power MOSFET
Datasheet	LSGE085R036 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
LSG	SCREW TERMINAL ALUMINUM ELECTROLYTIC CAPACITORS	Rubycon
LSG3331	3 mm (T1) MULTILED / Non Diffused	Siemens Semiconductor
LSG3331-JO	3 mm (T1) MULTILED / Non Diffused	Siemens Semiconductor
LSG3351	3 mm (T1) MULTILED / Diffused	Siemens Semiconductor
LSG3351-HO	3 mm (T1) MULTILED / Diffused	Siemens Semiconductor

Other Datasheets by Lonten

Part Number	Description
LSG04N65	N-channel MOSFET
LSG04N70A	N-channel Power MOSFET
LSG07N70	N-channel MOSFET
LSG11N65E	N-channel 650V Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

LSGE085R036 Lonten N-channel 85V, 120A, 3.6mΩ Power MOSFET Description Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using shielded gate trench RDS(on).max@ VGS=10V 3.6mΩ DMOS technology. This advanced technology has ID 120A been especially tailored to minimize on-state resistance,provide superior switching performance, Pin Configuration and with stand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  85V,120A,RDS(on).max=3.