Datasheet Summary
Lonten N-channel 85V, 120A, 3.6mΩ Power MOSFET
Description
Product Summary
These N-Channel enhancement mode power field VDSS
85V effect transistors are using shielded gate trench RDS(on).max@ VGS=10V 3.6mΩ
DMOS technology. This advanced technology has ID
120A been especially tailored to minimize on-state resistance,provide superior switching performance, Pin Configuration and with stand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Features
- 85V,120A,RDS(on).max=3.6mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
TO-263
- 100% EAS Guaranteed
- Green device...