LSGE085R036 Overview
Product Summary These N-Channel enhancement mode power field VDSS 85V effect transistors are using shielded gate trench RDS(on).max@ VGS=10V 3.6mΩ DMOS technology. This advanced technology has ID 120A been especially tailored to minimize on-state resistance,provide superior switching performance, and with stand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency...
LSGE085R036 Key Features
- 85V,120A,RDS(on).max=3.6mΩ@VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green device available