Datasheet4U Logo Datasheet4U.com

KTC3199 - NPN General Purpose Application

Key Features

  • High DC Current Gain: hFE=70~700.
  • Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ).
  • Low Noise: NF=1.0dB(Typ. ), 10dB(Max. ).
  • Complementary to KTA1267 Pin Configuration Bottom View CB E Maximum Ratings Symbol VCEO VCBO VEBO IC IE PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Emitter Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 50 5.0 150 150 400 -5.

📥 Download Datasheet

Datasheet Details

Part number KTC3199
Manufacturer Lunsure Electronic Technology
File Size 426.48 KB
Description NPN General Purpose Application
Datasheet download datasheet KTC3199 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KTC3199 NPN Transistor JCET
KTC3199 NPN Transistor MCC
KTC3199 NPN Transistor WEJ
KTC3199 EPITAXIAL PLANAR NPN TRANSISTOR KEC
KTC3199 Silicon NPN transistor BLUE ROCKET ELECTRONICS

Other Datasheets by Lunsure Electronic Technology

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • High DC Current Gain: hFE=70~700 • Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ) • Low Noise: NF=1.0dB(Typ.), 10dB(Max.) • Complementary to KTA1267 Pin Configuration Bottom View CB E Maximum Ratings Symbol VCEO VCBO VEBO IC IE PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Emitter Current Collector power dissipation Junction Temperature Storage Temperature Rating 50 50 5.