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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION SWITCHING APPLICATION.
FEATURES ᴌHigh DC Current Gain : hFE=70~700. ᴌExcellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA1267.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature
VCBO VCEO VEBO
IC IE PC Tj
Storage Temperature Range
Tstg
RATING 50 50 5 150 -150 400 150
-55ᴕ150
UNIT V V V mA mA
mW ᴱ ᴱ
J K
D
KTC3199
EPITAXIAL PLANAR NPN TRANSISTOR
B
F A
HM
C
EE
1 2 3N L
1. EMITTER 2. COLLECTOR 3. BASE
G
O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27
F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.
KTC3199 Datasheet
