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KTC3199L - EPITAXIAL PLANAR NPN TRANSISTOR

Key Features

  • ᴌHigh DC Current Gain : hFE=70ᴕ700. ᴌExcellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ. ). ᴌLow Noise : NF=0.2dB(Typ. ), 3dB(Max. ). ᴌComplementary to KTA1267L.

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Datasheet Details

Part number KTC3199L
Manufacturer KEC
File Size 59.66 KB
Description EPITAXIAL PLANAR NPN TRANSISTOR
Datasheet download datasheet KTC3199L Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA LOW NOISE AUDIO AMPLIFIER APPLICATION. FEATURES ᴌHigh DC Current Gain : hFE=70ᴕ700. ᴌExcellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=0.2dB(Typ.), 3dB(Max.). ᴌComplementary to KTA1267L. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 50 50 5 150 -150 400 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ J K D KTC3199L EPITAXIAL PLANAR NPN TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.