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Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769
MMSS8550
Features
• SOT-23 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 1.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55OC to +150OC • Marking Code: Y2
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min Max Units
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=100uAdc, IE=0)
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=0.1mAdc, IB=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
(IE=100uAdc, IC=0)
ICBO Collector Cutoff Current
(VCB=40Vdc, IE=0)
ICEO Collector Cutoff Current
(VCE=20Vdc, IB=0)
IEBO Emitter Cutoff Current
(VEB=5.
MMSS8550 Datasheet