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1N4148-1 - Silicon Switching Diode

This page provides the datasheet information for the 1N4148-1, a member of the 1N4148-1-MA Silicon Switching Diode family.

Datasheet Summary

Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) JEDEC TYPE# 1N914 VBR @ 100 A VRWM IO Volts Volts (pk) mA Vf1 IF = 10 mA.

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Datasheet preview – 1N4148-1

Datasheet Details

Part number 1N4148-1
Manufacturer MA-COM
File Size 519.43 KB
Description Silicon Switching Diode
Datasheet download datasheet 1N4148-1 Datasheet
Additional preview pages of the 1N4148-1 datasheet.

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Full PDF Text Transcription

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1N914 & 1N4148-1 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms Rev. V1 Electrical Specifications @ +25°C (unless otherwise Specified) JEDEC TYPE# 1N914 VBR @ 100 A VRWM IO Volts Volts (pk) mA Vf1 IF = 10 mA Vdc 100 75 75 0.8 Vf2 IF = 50 mA Trr 1 Vdc nsec 1.2 5 IR1 @ 20 Vdc nA 25 IR2 @ 75 Vdc IR3 @ 20 Vdc TA =150°C IR4 @ 75 Vdc TA =150°C Capacitance Capacitance @0V @1.5 V A A A pF pF 0.5 35 75 4.0 2.8 1N4148-1 100 75 200 0.8 1.2 5 35 0.
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