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1N4148-1 - Silicon Switching Diode

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms Rev. V3 Electrical Specifications @ TA = +25°C (unless otherwise specified) JEDEC TYPE# VBR @ 100 A VRWM Volts Volts (pk) IO (PCB.

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Datasheet Details

Part number 1N4148-1
Manufacturer VPT
File Size 526.70 KB
Description Silicon Switching Diode
Datasheet download datasheet 1N4148-1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N914, 1N4148-1, 1N4531 Silicon Switching Diode Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 200 mA @ TA = +25°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.00 A, sinewave, Pw = 8.3 ms Rev. V3 Electrical Specifications @ TA = +25°C (unless otherwise specified) JEDEC TYPE# VBR @ 100 A VRWM Volts Volts (pk) IO (PCB) TA = o +75 C (1) mA VF1 IF = 10 mA Vdc VF2 IF = 100* Trr 1 mA Vdc nsec IR1 @ 20 Vdc nA IR2 @ 75 Vdc IR3 @ 20 Vdc TA =150°C IR4 @ 75 Vdc TA =150°C Capacitance Capacitance @0V @1.5 V nA A A pF pF 1N914 100 75 200 0.8 1.2 5 25 500 35 75 4.0 2.