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1N4148UB - Silicon Switching Diode

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116.
  • Low Capacitance.
  • Fast Switching Speed.
  • Available in Unidirectional, Doubler, Common Anode and Common Cathode Polarities Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +75°C Derating Factor: 2.0 mA/°C above TA = +25°C Surge Current 2 A (pk) Electrical Specifications @ TA = +25°C (unless otherwise specified) JEDEC TYPE# VBR @ 100 A VRWM IO VF1 IF.

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Datasheet Details

Part number 1N4148UB
Manufacturer VPT
File Size 643.24 KB
Description Silicon Switching Diode
Datasheet download datasheet 1N4148UB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N4148UB, UBCA, UBCC, UBD, UB2, UB2R Silicon Switching Diode Rev. V1 Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116 • Low Capacitance • Fast Switching Speed • Available in Unidirectional, Doubler, Common Anode and Common Cathode Polarities Maximum Ratings Operating & Storage Temperature: -65°C to +200°C Operating Current: 200 mA @ TA = +75°C Derating Factor: 2.0 mA/°C above TA = +25°C Surge Current 2 A (pk) Electrical Specifications @ TA = +25°C (unless otherwise specified) JEDEC TYPE# VBR @ 100 A VRWM IO VF1 IF = 10 mA dc Volts Volts (pk) mA V dc 1N4148UB 100 75 200 0.8 VF2 IF = 100 mA dc Trr 1 V dc nsec 1.2 5 IR1 @ 20 Vdc nA 25 IR2 @ 75 Vdc IR3 @ 20 Vdc TA =150°C IR4 @ 75 Vdc TA =150°C Capacitance Capacitance @0V @1.