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1N4531 - Silicon Switching Diode

Download the 1N4531 datasheet PDF. This datasheet also covers the 1N4531-MA variant, as both devices belong to the same silicon switching diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 200 mA @ TA = +75°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.0 A, sinewave, Pw = 8.3 ms DC Reverse Voltage (VRWM): 75 V Rev. V1 DC Electrical Characteristics Ambient (°C) 25 25 150 -55 VF IF Min. mA V 10.
  • 100.
  • 10.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N4531-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1N4531 Silicon Switching Diode Features  Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/116  Metallurgically Bonded  Hermetically Sealed  Double Plug Construction Maximum Ratings Operating & Storage Temperature: -65°C to +175°C Operating Current: 200 mA @ TA = +75°C Derating Factor: 1.14 mA/°C above TA = +25°C Surge Current A: 2.0 A, sinewave, Pw = 8.3 ms DC Reverse Voltage (VRWM): 75 V Rev. V1 DC Electrical Characteristics Ambient (°C) 25 25 150 -55 VF IF Min. mA V 10 — 100 — 10 — 100 — Max. V 0.8 1.2 0.8 1.3 Ambient (°C) 25 25 150 150 IR V Min. (dc) A 20 — 75 — 20 — 75 — Max. A 0.025 0.500 35.0 75.0 Ambient (°C) 25 VBR IR Min. mA V 100 100 Max. V 25 AC Electrical Characteristics @ 25°C Parameter Capacitance @ 0 V Capacitance @ 1.