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1N4532 - Silicon Switching Diode

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144.
  • Metallurgically Bonded.
  • Hermetically Sealed.
  • Double Plug Construction.
  • DO-34 Axial Leaded Package Rev. V2 Absolute Maximum Ratings (TA = +25oC unless otherwise specified) Ratings Breakdown Voltage Symbol VBR Value 75 V dc Working Peak Reverse Voltage VRWM Operating Current (1) (2) (TA = +75oC) IO Peak Surge Current (8.3 ms) IFSM Junction & Storage Temperature Range TJ, TSTG 50 V.

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Datasheet Details

Part number 1N4532
Manufacturer VPT
File Size 458.14 KB
Description Silicon Switching Diode
Datasheet download datasheet 1N4532 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1N4532 Silicon Switching Diode Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/144 • Metallurgically Bonded • Hermetically Sealed • Double Plug Construction • DO-34 Axial Leaded Package Rev. V2 Absolute Maximum Ratings (TA = +25oC unless otherwise specified) Ratings Breakdown Voltage Symbol VBR Value 75 V dc Working Peak Reverse Voltage VRWM Operating Current (1) (2) (TA = +75oC) IO Peak Surge Current (8.3 ms) IFSM Junction & Storage Temperature Range TJ, TSTG 50 V (pk) 200 mA dc 2.0 A (pk) -55°C to +175°C 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information.