The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
1N4531, 1N4532
Silicon Epitaxial Planar Switching Diode
Applications • High-speed switching
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current Repetitive Peak Forward Current Non-repetitive Peak Forward Current
Power Dissipation Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 10 mA Reverse Current at VR = 20 V at VR = 50 V at VR = 20 V, Tj = 150 OC at VR = 50 V, Tj = 150 OC Diode Capacitance at VR = 0 , f = 1 MHz
Reverse Recovery Time at IF = 10 mA, IR = 60 mA, RL = 100 Ω at IF = 10 mA, IR = 10 mA, RL = 100 Ω
Max. 0.45
Max. 1.9
Min. 27.5
Black Cathode Band
Black Part No.
XXX Max. 2.9
Min. 27.
1N4532 Datasheet
