NXP Semiconductors 1N4532
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages.| Part No. | 1N4532 |
|---|---|
| Datasheet | 1N4532 Download |
| Manufacturer |  NXP Semiconductors |
| Description | High-speed diodes |
| Buy | Stock & Price |
FEATURES
● Hermetically sealed leaded glass SOD68 (DO-34) package● High switching speed: max. 4 ns
● Continuous reverse voltage: max. 75 V
● Repetitive peak reverse voltage: max. 75 V
● Repetitive peak forward current: max. 450 mA.
APPLICATIONS
● High-speed switching● Protection diodes in reed relays.
DESCRIPTION
1N4531; 1N4532 k handbook, halfpage a MAM156 The diodes are type branded. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 °C − − − − −65 − 4 1 0.5 500 +200 200 A A A mW °C °C see Fig.2 CONDITIONS MIN. − − − − MAX. 75 75 200 450 V V mA mA UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodesELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
