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2N3716 - NPN High Power Silicon Transistor

Download the 2N3716 datasheet PDF. This datasheet also covers the 2N3715-MA variant, as both devices belong to the same npn high power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Available in JAN, JANTX, JANTXV per MIL-PRF19500/408.
  • TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynami.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3715-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2N3715 & 2N3716 NPN High Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF19500/408  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characteristics Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Base Cutoff Current Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current On Characteristics1 Forward Current Transfer Ratio Collector - Emitter Saturation Voltage Emitter - Base Saturation Voltage Dynamic Characteristics IC = 10 mAdc, 2N3715 IC = 10 mAdc, 2N3716 V(BR)CEO Vdc VCE = 60 Vdc, 2N3715 VCE = 80 Vdc, 2N3716 ICEO µAdc VEB = 7 Vdc IEBO mAdc VCE = 60 Vdc, VBE = 1.5 Vdc, 2N3715 VCE = 80 Vdc, VBE = 1.