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2N4150 - NPN Power Silicon Transistor

Download the 2N4150 datasheet PDF. This datasheet also covers the 2N4150-MA variant, as both devices belong to the same npn power silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/394.
  • TO-5 Package Rev. V1 Electrical Characteristics1 Parameter Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current On Characteristics Collector - Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N4150-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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2N4150 NPN Power Silicon Transistor Features  Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF19500/394  TO-5 Package Rev. V1 Electrical Characteristics1 Parameter Off Characteristics Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current On Characteristics Collector - Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Dynamic Characteristics Test Conditions IC = 100 mAdc VEB = 7.0 Vdc VEB = 5.0 Vdc VBE = 0.5 Vdc, VCE = 60 Vdc VCE = 60 Vdc VCB = 100 Vdc VCB = 100 Vdc IC = 1.0 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, VCE = 5.0 Vdc IC = 10.0 Adc, VCE = 5.0 Vdc IC = 5.0 Adc, IB = 0.5 Adc IC = 10.
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