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2N4150 - NPN Power Silicon Transistor

Description

at any time, without notice.

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Features

  • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394.
  • Radiation Tolerant Levels M, D, P, L and R.
  • TO-5 Package.
  • Designed for Use in High Current Switching.

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Datasheet Details

Part number 2N4150
Manufacturer VPT
File Size 390.39 KB
Description NPN Power Silicon Transistor
Datasheet download datasheet 2N4150 Datasheet
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Full PDF Text Transcription

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2N4150, 2N4150S NPN Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 • Radiation Tolerant Levels M, D, P, L and R • TO-5 Package • Designed for Use in High Current Switching Applications • Ideal for Converters, Inverters and Wide Band Amplifiers Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V4 Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Collector - Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 100 mA dc V(BR)CEO V dc 70 — VEB = 7.0 Vdc VEB = 5.
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