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2N4150, 2N4150S
NPN Power Silicon Transistor
Features
• Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394
• Radiation Tolerant Levels M, D, P, L and R • TO-5 Package • Designed for Use in High Current Switching Applications • Ideal for Converters, Inverters and Wide Band Amplifiers
Electrical Characteristics (TA = +25oC unless otherwise noted)
Parameter
Test Conditions
Symbol Units Min.
Rev. V4 Max.
Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current
Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current
Collector - Base Cutoff Current Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 100 mA dc
V(BR)CEO V dc
70
—
VEB = 7.0 Vdc VEB = 5.