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2N4150 - NPN Power Silicon Transistor

General Description

at any time, without notice.

VPT Components makes no commitment to update the information and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to its specifications and product descriptions.

Key Features

  • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394.
  • Radiation Tolerant Levels M, D, P, L and R.
  • TO-5 Package.
  • Designed for Use in High Current Switching.

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Datasheet Details

Part number 2N4150
Manufacturer VPT
File Size 390.39 KB
Description NPN Power Silicon Transistor
Datasheet download datasheet 2N4150 Datasheet

Full PDF Text Transcription (Reference)

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2N4150, 2N4150S NPN Power Silicon Transistor Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads (Si) per MIL-PRF-19500/394 • Radiation Tolerant Levels M, D, P, L and R • TO-5 Package • Designed for Use in High Current Switching Applications • Ideal for Converters, Inverters and Wide Band Amplifiers Electrical Characteristics (TA = +25oC unless otherwise noted) Parameter Test Conditions Symbol Units Min. Rev. V4 Max. Collector - Emitter Breakdown Voltage Emitter - Base Cutoff Current Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Collector - Base Cutoff Current Collector - Base Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 100 mA dc V(BR)CEO V dc 70 — VEB = 7.0 Vdc VEB = 5.