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DU28200M
RF Power MOSFET Transistor 200 W, 2 - 175 MHz, 28 V
Features
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant
ABSOLUTE MAXIMUM RATINGS AT 25° C
Parameter
Symbol
Rating
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
VDS VGS IDS PD TJ TSTG θJC
65 20 20 389 200 -65 to +150 0.45
Units V V A W °C °C
°C/W
TYPICAL DEVICE IMPEDANCE
F (MHz)
ZIN (Ω)
ZLOAD (Ω)
30
2.7 - j4.8
7.2 - j1.9
100
1.6 - j3.0
5.25 - j1.4
150
1.5 - j2.0
5.0 - j0.7
175
1.6 - j1.0
5.2 - j0.6
200
1.8 - j0.5
5.5 - j0.
DU28200M Datasheet
