DU28200M
DU28200M is RF MOSFET Power Transistor manufactured by Tyco Electronics.
Features
N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than petitive Devices
P&--4
DU28200M v2.00 I
Absolute Maximum Ratings at 25°C
Parameter I Symbol I Rating 1 Units 1
I Drain-Source Voltage
Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature Storage Temperature Thermal Resistance
(
V,, VOS ‘DS
(
65 20 20
I v V A
P, TJ T STG
/
389 200 -65 to +150
W “C “C
Electrical Characteristics
Parameter at 25°C
Test Conditions
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current 1 Gate Threshold Voltage Fonvard Transconductance Input Capacitance Output Capacitance ( Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance
- Per Side Specifications
BVDss ‘cm ‘GSS I v G,rr,, GM CISS COSS I CFSS
5.0 5.0
V n-IA p A 1 v S p F p F 1 p F d B %
- V,,=O.O V, I,,=250 m A V,,=28.0 V, V,,=O.O V‘ v,,=20.0 v, V,st O.O v I v,,=~o.ov,
V,,=l O.O
1 2.0 2.5
- 1 6.0 225 200
1,,=500.0 m A
V, I,,=50 A, ~v,,=l .O V, 80~
I Pulse’
Vr,,=28.0 V, F=l .OMHz’ V,,=28.0 V, F=l .O MHz’ 1 V,,=28.0 V, F=l.O MHz’ V,,=28.0 V, I,,=1 000 m A, Pe~200.0 W, F=l75 MHz I
13 55
-...
