DU28200M - RF MOSFET Power Transistor

Features

N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.00 I Absolute Maximum Ratings at 25°C Parameter I Symbol I Rating 1 Units 1 I Drain-SourceVoltage Gate-Source Voltage Drain-Source Current I Power Dissipation Junction Temperature StorageTemperature Thermal Resistance ( V,, VOS ‘DS ( 65 20 20 I v V A I 1 P, TJ T STG / 389 200 -65 to +150 1 W “C “C 1.

Tyco Electronics

Datasheet Details

Part number	DU28200M
Manufacturer	Tyco Electronics
File Size	177.19 KB
Description	RF MOSFET Power Transistor
Datasheet	DU28200M Datasheet
Additional preview pages of the DU28200M datasheet.

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Full PDF Text Transcription

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an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz Features N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices P&--4 DU28200M v2.

Published: Apr 3, 2005 |