MA4AGFCP910 Datasheet | MACOM Technology Solutions

Features  Low Series Resistance  Ultra Low Capacitance  Millimeter Wave Switching & Cutoff Frequency  2 Nanosecond Switching Speed  Can be Driven by a Buffered TTL  Silicon Nitride Passivation  Polyimide Scratch Protection  Ro HS pliant Rev. V5 Chip Dimensions MA4AGP907 and MA4AGFCP910 Description M/A-'s MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (Al Ga As) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3n S switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. Applications The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 allows their use through millimeter frequencies for RF switches and switched phase shifter applications. The diodes are designed for use in pulsed or CW applications, where single digit n S switching speed is required. For surface mount assembly, the low capacitance of these switches make them ideal for use in microwave multi-throw switch assemblies, where the series capacitance of each “off” port adversely loads the input and affects VSWR. Absolute Maximum Ratings TAMB = +25°C (unless otherwise specified) Parameter Absolute Maximum Reverse Voltage MA4AGP907 -50V MA4AGFCP910 -75V Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Junction Temperature +175°C Dissipated Power ( RF & DC ) 50m W C.W. Incident Power +23 d Bm Mounting Temperature +280°C for 10 seconds Notes: 1. Gold Pads 14µM thick. 2. Yellow areas indicate ohmic gold mounting pads. 3. Dimensions A thru F are identical for both devices INCHES MIN. MAX. MIN. MAX. 0.6604 0.6858 0.0135 0.0145 0.3429 0.3683 0.0065 0.0075 0.1651...