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MA4AGFCP910 - AlGaAs Flip-Chip PIN Diode

General Description

M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode.

These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Key Features

  • MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AlGaAs Flip-Chip PIN Diode 100MHz to 50GHz Features • • • • • • • MA4AGFCP910 Rev 2.0 Top View Shown Is With Diode Junction Up Cathode Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection Description M/A-COM's MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics. www.DataSheet4U.com They are fully passivated with silicon nitride and have an additional layer of a polymer for scratch protection.