Datasheet Summary
AlGaAs Flip-Chip PIN Diode
100MHz to 50GHz
Features
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- MA4AGFCP910
Rev 2.0
Top View Shown Is With Diode Junction Up
Cathode
Lower Series Resistance, 5.2Ω Ultra Low Capacitance, 18 f F High Switching Cutoff Frequency, 50 GHz 3 Nanosecond Switching Speed Driven by Standard TTL Silicon Nitride Passivation Polyimide Scratch Protection
Description
M/A-'s MA4AGFCP910 is an Aluminum Gallium Arsenide Flip-Chip PIN diode. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC Product, ( 0.1 ps) and 3nS switching characteristics.
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