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MA4E1310 - GaAs Flip Chip Schottky Barrier Diode

This page provides the datasheet information for the MA4E1310, a member of the MA4E1310-MA GaAs Flip Chip Schottky Barrier Diode family.

Datasheet Summary

Description

M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode.

This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics.

Features

  • Low Series Resistance.
  • Low Capacitance.
  • High Cutoff Frequency.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Designed for Easy Circuit Insertion.

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Datasheet preview – MA4E1310

Datasheet Details

Part number MA4E1310
Manufacturer MA-COM
File Size 600.77 KB
Description GaAs Flip Chip Schottky Barrier Diode
Datasheet download datasheet MA4E1310 Datasheet
Additional preview pages of the MA4E1310 datasheet.

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Full PDF Text Transcription

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MA4E1310 GaAs Flip Chip Schottky Barrier Diode Features  Low Series Resistance  Low Capacitance  High Cutoff Frequency  Silicon Nitride Passivation  Polyimide Scratch Protection  Designed for Easy Circuit Insertion Description M/A-COM's MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion.
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