MA4E1310 Overview
M/A-'s MA4E1310 is a gallium arsenide flip chip Schottky barrier diode. This diode is fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. This device is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection.
MA4E1310 Key Features
- Low Series Resistance
- Low Capacitance
- High Cutoff Frequency
- Silicon Nitride Passivation
- Polyimide Scratch Protection
- Designed for Easy Circuit Insertion