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MA4P290CK-287T - PIN / NIP Diode Chips

Download the MA4P290CK-287T datasheet PDF. This datasheet also covers the MA4P7436-MA variant, as both devices belong to the same pin / nip diode chips family and are provided as variant models within a single manufacturer datasheet.

Description

MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN/NIP diode chips which use ceramic glass and silicon nitride passivation technology.

The silicon PIN/NIP chip series of devices cover a broad spectrum of performance requirements for control circuit applications.

Features

  • Switch & Attenuator Die.
  • Extensive Selection of I-Region Lengths.
  • Hermetic.
  • Glass Passivated Cermachip.
  • Oxide Passivated Planar Chips.
  • Voltage Ratings to 3000 V.
  • Fast Switching Speed.
  • Low Loss.
  • High Isolation.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MA4P7436-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MA4P290-1225T PIN / NIP Diode Chips
MA4P290-287T PIN / NIP Diode Chips
MA4P202-120 Packaged PIN Diodes
MA4P202-255 Packaged PIN Diodes
MA4P203-30 Packaged PIN Diodes

Full PDF Text Transcription

Click to expand full text
Silicon PIN / NIP Diode Chips Features • Switch & Attenuator Die • Extensive Selection of I-Region Lengths • Hermetic • Glass Passivated Cermachip • Oxide Passivated Planar Chips • Voltage Ratings to 3000 V • Fast Switching Speed • Low Loss • High Isolation • RoHS* Compliant Description MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN/NIP diode chips which use ceramic glass and silicon nitride passivation technology. The silicon PIN/NIP chip series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages.
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