Datasheet4U Logo Datasheet4U.com

MAAP-011060 - Power Amplifier Module

This page provides the datasheet information for the MAAP-011060, a member of the MAAP-011060-MA Power Amplifier Module family.

Datasheet Summary

Description

The MAAP-011060 is a power amplifier module assembled in a 6 mm land grid array (LGA) that is self-contained with 50 Ω input and output terminals.

The input and output ports are also DC blocked.

This device utilizes a GaAs HBT process for optimal 5 V performance in 1.6 GHz satellite applications.

Features

  • Linear Output Power: 33 dBm.
  • Gain with Saw Filter on Input: 30 dB.
  • ACPR = -34.0 dBc @ 41.67 kHz offset, POUT = 33 dBm.
  • High PAE: >30%.
  • Integrated Active Bias Circuit.
  • Power-Down Function.
  • InGaP HBT device technology.
  • Rugged single supply power amplifier design.
  • High Peak-Power Efficiency.
  • Lead-Free 6 mm 12-Lead LGA package.
  • Halogen-Free “Green” Mold Compound.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Datasheet preview – MAAP-011060

Datasheet Details

Part number MAAP-011060
Manufacturer MA-COM
File Size 767.20 KB
Description Power Amplifier Module
Datasheet download datasheet MAAP-011060 Datasheet
Additional preview pages of the MAAP-011060 datasheet.
Other Datasheets by MA-COM

Full PDF Text Transcription

Click to expand full text
MAAP-011060 Power Amplifier Module 1616 - 1626.5 MHz, 2 Watts Features  Linear Output Power: 33 dBm  Gain with Saw Filter on Input: 30 dB  ACPR = -34.0 dBc @ 41.67 kHz offset, POUT = 33 dBm  High PAE: >30%  Integrated Active Bias Circuit  Power-Down Function  InGaP HBT device technology  Rugged single supply power amplifier design  High Peak-Power Efficiency  Lead-Free 6 mm 12-Lead LGA package  Halogen-Free “Green” Mold Compound  RoHS* Compliant and 260°C Reflow Compatible Description The MAAP-011060 is a power amplifier module assembled in a 6 mm land grid array (LGA) that is self-contained with 50 Ω input and output terminals. The input and output ports are also DC blocked. This device utilizes a GaAs HBT process for optimal 5 V performance in 1.6 GHz satellite applications.
Published: |