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MAAP-011060 - Power Amplifier Module

Download the MAAP-011060 datasheet PDF. This datasheet also covers the MAAP-011060-MA variant, as both devices belong to the same power amplifier module family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAAP-011060 is a power amplifier module assembled in a 6 mm land grid array (LGA) that is self-contained with 50 Ω input and output terminals.

The input and output ports are also DC blocked.

This device utilizes a GaAs HBT process for optimal 5 V performance in 1.6 GHz satellite applications.

Key Features

  • Linear Output Power: 33 dBm.
  • Gain with Saw Filter on Input: 30 dB.
  • ACPR = -34.0 dBc @ 41.67 kHz offset, POUT = 33 dBm.
  • High PAE: >30%.
  • Integrated Active Bias Circuit.
  • Power-Down Function.
  • InGaP HBT device technology.
  • Rugged single supply power amplifier design.
  • High Peak-Power Efficiency.
  • Lead-Free 6 mm 12-Lead LGA package.
  • Halogen-Free “Green” Mold Compound.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAAP-011060-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAAP-011060 Power Amplifier Module 1616 - 1626.5 MHz, 2 Watts Features  Linear Output Power: 33 dBm  Gain with Saw Filter on Input: 30 dB  ACPR = -34.0 dBc @ 41.67 kHz offset, POUT = 33 dBm  High PAE: >30%  Integrated Active Bias Circuit  Power-Down Function  InGaP HBT device technology  Rugged single supply power amplifier design  High Peak-Power Efficiency  Lead-Free 6 mm 12-Lead LGA package  Halogen-Free “Green” Mold Compound  RoHS* Compliant and 260°C Reflow Compatible Description The MAAP-011060 is a power amplifier module assembled in a 6 mm land grid array (LGA) that is self-contained with 50 Ω input and output terminals. The input and output ports are also DC blocked. This device utilizes a GaAs HBT process for optimal 5 V performance in 1.6 GHz satellite applications.