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MAAP-011170 - Power Amplifier

Download the MAAP-011170 datasheet PDF. This datasheet also covers the MAAP-011170-MA variant, as both devices belong to the same power amplifier family and are provided as variant models within a single manufacturer datasheet.

General Description

The MAAP-011170 is a four stage 37-40 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 27 dB with a +38 dBm Output Third Order Intercept.

The amplifier contains an integrated, temperature compensated, on-chip power detector.

Key Features

  • Linear Power Amplifier.
  • On-Chip Power Detector.
  • Output Power Adjust.
  • 27.0 dB Small Signal Gain.
  • +27.0 dBm P1dB Compression Point.
  • +38.0 dBm OIP3.
  • Lead-Free 7 mm 16-lead SMD Package.
  • RoHS.
  • Compliant and 260°C Reflow Compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAAP-011170-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by MACOM Technology Solutions

Part Number Description
MAAP-011106 Power Amplifier
MAAP-011139 Power Amplifier
MAAP-011140-DIE Power Amplifier
MAAP-011146-STD Power Amplifier
MAAP-011161 Power Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MAAP-011170 Power Amplifier 37.0 - 40.0 GHz Features  Linear Power Amplifier  On-Chip Power Detector  Output Power Adjust  27.0 dB Small Signal Gain  +27.0 dBm P1dB Compression Point  +38.0 dBm OIP3  Lead-Free 7 mm 16-lead SMD Package  RoHS* Compliant and 260°C Reflow Compatible Description The MAAP-011170 is a four stage 37-40 GHz packaged GaAs MMIC power amplifier that has a small signal gain of 27 dB with a +38 dBm Output Third Order Intercept. The amplifier contains an integrated, temperature compensated, on-chip power detector. This MMIC uses M/A-COM Technology Solutions’ GaAs pHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.