• Part: MASW-004240-13170W
  • Description: SP4T Surface Mount Silicon PIN Diode Switch
  • Category: Diode
  • Manufacturer: MACOM Technology Solutions
  • Size: 241.82 KB
Download MASW-004240-13170W Datasheet PDF
MACOM Technology Solutions
MASW-004240-13170W
MASW-004240-13170W is SP4T Surface Mount Silicon PIN Diode Switch manufactured by MACOM Technology Solutions.
- Part of the MASW-004240-13170W-MA comparator family.
Features - Operating Freq. 10 ± 2GHz or 24 ± 2GHz - Surface Mount Device - Integrated Bias Network - No Wire Bonds Required - Low Current Consumption +12 m A for On State/0V for Off Condition - Rugged, Glass Encapsulated Construction - Fully Monolithic - Polymer Scratch Protection - Ro HS pliant Description The MASW-004240-13170W is a surface mount SP4T switch chip with integrated bias network. It utilizes M/A- technology Solutions HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310, which allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this bination of silicon and glass gives HMIC devices low loss and high isolation performance with exceptional repeatability through low millimeter frequencies. Patterned gold backside metal allows for manual or re-flow soldering without the need for wire bond connections to the RF and bias ports. The chip may be soldered using 80Au/20Sn, Ro HS pliant solders or electrically conductive silver epoxy. The RF bond pads are labeled J1-J5 and are 375x375µM (15x15mils) square. The DC bias bond pads are labeled B2-B5 and are also 375x375µM (15x15mils) square. Yellow areas denote backside soldering points for bias and RF connections. Parameter Operating Temperature Storage Temperature Junction Temperature Absolute Maximum -65o C to +125o C -65o C to +150o C +175o C Applied Forward Current +40m A RF Incident Power +30d Bm C.W. Mounting Temperature +280o C for 10 Seconds Applications The MASW-004240-13170W has been designed for 24GHz automotive radar sensor applications and is also ideally suited for use at 10GHz. The switch is turned on by applying a forward current of +12m A at 4V to the appropriate bias port and is turned off at 0V. The RF bias network has been incorporated into the design for ease of use and space considerations. ADVANCED: Data Sheets contain information...