MAVR-000120-1411 Datasheet | MACOM Technology Solutions

Features - Usable Past 70 GHz - Constant Gamma for Linear Tuning - Low Parasitic Capacitance - High Q - Silicon Nitride Passivation - Polyimide Scratch Protection - Surface Mount Configuration - Lead Free (Ro HS pliant) - Available in Pocket Tape and Reel - Can withstand 500 Temperature Cycles (-65°C to +150°C), mounted with 96.5 Sn/3.5 Ag solder without Mechanical Degradation. - Can be Mounted with Solder or Conductive Epoxy Description The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. This diode is fully passivated with silicon nitride and has an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. Chip Layout Rev. V8 Front View (Circuit Side) Back View (Operator Side) Schematic RS (V) CJ (V) Ordering Information Part Number MAVR-000120-14110P MAVR-000120-14110G Package Pocket Tape Gel Pack Cparasitic Flip Chip Tuning Varactor Equivalent Circuit MA Technology Solutions Inc. (MA) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit .ma. for additional data sheets and product information. For further information and support please visit: https://.ma./support DC-0003906 Solderable Ga As Constant Gamma Flip-Chip Varactor Diode Electrical Specifications @ TA = +25°C Breakdown Voltage @ IR = 10 µA, Vb = 20 V Minimum Reverse Leakage Current @ VR =14 V, IR = 100 n A Maximum Parameter Test Conditions Total Capacitance Q Factor VR = 0 V, 1 MHz VR = 4 V, 1 MHz VR = 10 V, 1 MHz VR = 4 V, 50...