Datasheet4U Logo Datasheet4U.com

MAVR-000120-14110G - Solderable GaAs Constant Gamma Flip-Chip Varactor Diode

This page provides the datasheet information for the MAVR-000120-14110G, a member of the MAVR-000120-1141 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode family.

Datasheet Summary

Description

The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode.

This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.

Features

  • Usable Past 70 GHz.
  • Constant Gamma for Linear Tuning.
  • Low Parasitic Capacitance.
  • High Q.
  • Silicon Nitride Passivation.
  • Polyimide Scratch Protection.
  • Surface Mount Configuration.
  • Lead Free (RoHS Compliant).
  • Available in Pocket Tape and Reel.
  • Can withstand 500 Temperature Cycles (-65°C to +150°C), mounted with 96.5 Sn/3.5 Ag solder without Mechanical Degradation.
  • Can be Mounted with Solder or Conduc.

📥 Download Datasheet

Datasheet preview – MAVR-000120-14110G

Datasheet Details

Part number MAVR-000120-14110G
Manufacturer MACOM
File Size 365.11 KB
Description Solderable GaAs Constant Gamma Flip-Chip Varactor Diode
Datasheet download datasheet MAVR-000120-14110G Datasheet
Additional preview pages of the MAVR-000120-14110G datasheet.
Other Datasheets by MACOM

Full PDF Text Transcription

Click to expand full text
Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Features • Usable Past 70 GHz • Constant Gamma for Linear Tuning • Low Parasitic Capacitance • High Q • Silicon Nitride Passivation • Polyimide Scratch Protection • Surface Mount Configuration • Lead Free (RoHS Compliant) • Available in Pocket Tape and Reel • Can withstand 500 Temperature Cycles (-65°C to +150°C), mounted with 96.5 Sn/3.5 Ag solder without Mechanical Degradation. • Can be Mounted with Solder or Conductive Epoxy Description The MAVR-000120-1411 is a gallium arsenide flip chip hyperabrupt varactor diode. This device is fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics.
Published: |