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MHV502-11 - Silicon Hyperabrupt Tuning Varactor Diodes

This page provides the datasheet information for the MHV502-11, a member of the MHV500-11-MA Silicon Hyperabrupt Tuning Varactor Diodes family.

Datasheet Summary

Description

The MHV5xx‐11 series of silicon hyperabrupt tuning varactor diodes offer a large change in junction capacitance over a small tuning voltage range.

It is a mesa device with an epitaxially‐deposited cathode layer for low series resistance and high quality factor.

Features

  • All EPI Mesa Construction.
  • High Reliability.
  • High Quality Factor.
  • Glass Passivation.
  • RoHS.
  • Compliant.

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Datasheet preview – MHV502-11

Datasheet Details

Part number MHV502-11
Manufacturer MA-COM
File Size 526.83 KB
Description Silicon Hyperabrupt Tuning Varactor Diodes
Datasheet download datasheet MHV502-11 Datasheet
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Full PDF Text Transcription

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Passivation  RoHS* Compliant Description The MHV5xx‐11 series of silicon hyperabrupt tuning varactor diodes offer a large change in junction capacitance over a small tuning voltage range. It is a mesa device with an epitaxially‐deposited cathode layer for low series resistance and high quality factor. The die is passivated with a high‐reliability glass passivation for very fast settling time. This unpackaged die, is nominally 0.010 in (L) x 0.010 in (W) x 0.005 in (H). This rugged device is capable of reliable operation in all military, commercial and industrial applications. Contact the factory for other package styles.
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