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MHV505-11 - Silicon Hyperabrupt Tuning Varactor Diodes

Download the MHV505-11 datasheet PDF. This datasheet also covers the MHV500-11-MA variant, as both devices belong to the same silicon hyperabrupt tuning varactor diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

The MHV5xx‐11 series of silicon hyperabrupt tuning varactor diodes offer a large change in junction capacitance over a small tuning voltage range.

It is a mesa device with an epitaxially‐deposited cathode layer for low series resistance and high quality factor.

Key Features

  • All EPI Mesa Construction.
  • High Reliability.
  • High Quality Factor.
  • Glass Passivation.
  • RoHS.
  • Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MHV500-11-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MHV5xx-11 Series Silicon Hyperabrupt Tuning Varactor Diodes Features  All EPI Mesa Construction  High Reliability  High Quality Factor  Glass Passivation  RoHS* Compliant Description The MHV5xx‐11 series of silicon hyperabrupt tuning varactor diodes offer a large change in junction capacitance over a small tuning voltage range. It is a mesa device with an epitaxially‐deposited cathode layer for low series resistance and high quality factor. The die is passivated with a high‐reliability glass passivation for very fast settling time. This unpackaged die, is nominally 0.010 in (L) x 0.010 in (W) x 0.005 in (H). This rugged device is capable of reliable operation in all military, commercial and industrial applications. Contact the factory for other package styles.