MPN7360 Datasheet | MACOM Technology Solutions

Features - Voltage Breakdown up to 800 V - Passivated Mesa Construction - Screening Available per MIL-PRF-19500 / 38534 Description These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Part # MPN7330 Breakdown Voltage VB IR = 10 µA V Min. Series Resistance RS IF = 100 m A (100 MHz) Ω Max. Junction Capacitance CJ VR = 50 V Minority Carrier Lifetime IF = 10 m A IR = 6 m A 50% recovery p F ns Max. Min. 0.40 500 Theta °C/W Max. I-Region Width Contact Diameter Chip Size µm mils Mils (sq.) Nominal 30 10 15 1.00 2500 7 70 20 37 MPN7370 2.30 5000 5 70 40 64 MPN7380 0.60 2500 7 80 24...