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MPN7453A - High Power Silicon PIN Diodes

Download the MPN7453A datasheet PDF. This datasheet also covers the MPN7330-MA variant, as both devices belong to the same high power silicon pin diodes family and are provided as variant models within a single manufacturer datasheet.

Description

These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions.

Rev.

V Min.

Features

  • Voltage Breakdown up to 800 V.
  • Passivated Mesa Construction.
  • Screening Available per MIL-PRF-19500 / 38534.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPN7330-MA-COM.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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High Power Silicon PIN Diodes Silicon PIN Diode Chips Features  Voltage Breakdown up to 800 V  Passivated Mesa Construction  Screening Available per MIL-PRF-19500 / 38534 Description These silicon PIN diodes feature fully passivated mesa designs with tri-metalization for reliable operation under the most demanding conditions. Rev. V1 Electrical Specifications: TA = +25°C (unless otherwise specified) Part # MPN7330 Breakdown Voltage VB IR = 10 µA V Min. 300 Series Resistance RS IF = 100 mA (100 MHz) Ω Max. 0.5 Junction Capacitance CJ VR = 50 V Minority Carrier Lifetime IF = 10 mA IR = 6 mA 50% recovery pF ns Max. Min. 0.40 500 Theta °C/W Max. 10 I-Region Width Contact Diameter Chip Size µm mils Mils (sq.) Nominal 30 10 15 MPN7360 600 0.4 1.
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