Datasheet Summary
The RF MOSFET Line 30W, to 400MHz, 28V
Designed for wideband large signal output and drive stages up to 400 MHz range.
N- Channel enhancement mode
- Guaranteed 28 V, 150 MHz performance
Output power = 30 W Minimum gain = 13 dB Efficiency
- 60% (Typical)
- Small- and large- signal characterization
- Typical performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain
- 100% tested for load mismatch at all phase angles with 30:1 VSWR
- Low noise figure
- 1.5 dB (typ.) at 1.0 A, 150 MHz
- Excellent thermal stability, ideally suited for Class A operation
- Facilitates manual gain control, ALC and modulation techniques
Product Image
Rev. V2
Maximum Ratings
M/A- Technology Solutions...
