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MRF137 - N-CHANNEL MOS BROADBAND RF POWER FET

Features

  • 47 46 48 48 48 |S22| 0.661 0.692 0.747 0.768 0.774 0.782 0.787 0.787 0.787 0.787 0.787 0.787 0.788 0.788 0.788 0.788 0.788 0.790 0.792 0.793 0.796 0.799 0.805 0.816 0.822 0.833 0.828 0.842 0.849 0.856 0.866 0.870 0.875 0.888 0.890 0.898 0.913 0.918 0.945 0.952 0.974 0.958 0.953 0.943 0.957 0.957 S22 φ.
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 1.5 dB (Typ) at 1.
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