• Part: MRF137
  • Description: N-CHANNEL MOS BROADBAND RF POWER FET
  • Manufacturer: Motorola Semiconductor
  • Size: 196.49 KB
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Datasheet Summary

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF137/D The RF MOSFET Line RF Power Field-Effect Transistor N- Channel Enhancement- Mode . . . designed for wideband large- signal output and driver stages up to 400 MHz range. - Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency - 60% (Typical) - Small- Signal and Large- Signal Characterization - Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.7 dB Gain - 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR - Low Noise Figure - 1.5 dB (Typ) at 1.0 A, 150 MHz - Excellent Thermal Stability, Ideally Suited For Class A Operation - Facilitates Manual Gain Control, ALC...