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MRF448A - The RF Line NPN Silicon Power Transistor

Download the MRF448A datasheet PDF. This datasheet also covers the MRF448A-MA variant, as both devices belong to the same the rf line npn silicon power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz.

Ideal for marine and base station equipment.

Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45% Intermodulation distortion @ 250 W (PEP) - I

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Note: The manufacturer provides a single datasheet file (MRF448A-MA-COM.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MRF448A The RF Line NPN Silicon Power Transistor 250 W, 30 MHz, 50 V Description Designed primarily for high voltage applications as a high power linear amplifiers from 2 to 30 MHz. Ideal for marine and base station equipment.  Specified 50 V, 30 MHz characteristics Output power = 250 W Minimum gain = 12 dB Efficiency = 45%  Intermodulation distortion @ 250 W (PEP) - IMD = -30 dB (max.)  100% tested for load mismatch at all phase angles with 3:1 VSWR Product Image Rev. V1 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Withstand Current - 10 s Total Device Dissipation @ Tc =25°C (1) Derate above 25°C Storage Temperature Range Symbol VCEO VCBO VEBO IC - PD Tstg Value 50 100 4 16 20 290 1.